Matthieu Despeisse received his degree in electrical engineering from INSA-Lyon, France, in 2002. He then worked until 2008 at the European Organization for Particle Physics (CERN) in Geneva, Switzerland, focusing on advanced Silicon radiation sensors (3D-Si, SiPM, MCP, a-Si:H), low-power microelectronics and technology transfer.
He obtained his PhD degree in 2006 for his work at CERN on amorphous silicon sensors deposited directly on readout electronics. He then joined the IMT PV-lab of EPFL in 2008, to lead the research team working on multi-junctions thin film silicon photovoltaics.
Since 2013, he leads the research activities on crystalline silicon photovoltaics in the CSEM PV-Center, in Neuchâtel, Switzerland, with special focus on silicon heterojunction technology, passivating contacts, metallization-interconnection and metrology.
May 30, 2017